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Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN.
- Source :
- Applied Physics Letters; 10/28/2002, Vol. 81 Issue 18, p3389, 3p, 4 Graphs
- Publication Year :
- 2002
-
Abstract
- As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L[SUB3]-edge. The angle dependence of the XANES spectra shows that the Ga-N bonds lying in the bilayer have lower energies than bonds along the c-axis, which can be attributed to the polar nature of the GaN film. The comparison of the Ga L[SUB3]-edge XANES spectra of as-grown and Zn-doped GaN reveals significant dopant induced enhancement of near-edge Ga d-derived states. [ABSTRACT FROM AUTHOR]
- Subjects :
- SPECTRUM analysis
X-ray absorption near edge structure
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 81
- Issue :
- 18
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 7593005
- Full Text :
- https://doi.org/10.1063/1.1518776