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Transition between Ge segregation and trapping during high-pressure oxidation of GexSi1-x/Si.

Authors :
Frey, E. C.
Yu, N.
Patnaik, B.
Parikh, N. R.
Swanson, M. L.
Chu, W. K.
Source :
Journal of Applied Physics; 10/1/1993, Vol. 74 Issue 7, p4750, 6p, 2 Diagrams, 1 Chart, 3 Graphs
Publication Year :
1993

Abstract

Reports on the transition between germanium segregation and trapping during high-pressure oxidation of Ge[subx]Si[sub1-x]/Si. Analysis of the atomic fraction x of germanium; Effect of oxidation on the germanium distribution; Significance of the oxidation of Ge[subx]Si[sub1-x] alloys.

Subjects

Subjects :
GERMANIUM
OXIDATION
ALLOYS

Details

Language :
English
ISSN :
00218979
Volume :
74
Issue :
7
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7621338
Full Text :
https://doi.org/10.1063/1.354345