Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition.

Presents a study which determined the substrate temperature dependence of homoepitaxial growth of silicon using mass selected ion beam deposition. Function for the reflection of high-energy electron diffraction and Rutherford backscattering spectrometry; Transition to an amorphous phase at lower film thickness; Effects of substrate temperature, contamination and surface damage on the growth mechanism.