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Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition.

Authors :
Al-Bayati, A. H.
Boyd, K. J.
Marton, D.
Todorov, S. S.
Rabalais, J. W.
Zhang, Z. H.
Chu, W. K.
Source :
Journal of Applied Physics; 10/1/1994, Vol. 76 Issue 7, p4383, 7p, 4 Black and White Photographs, 4 Graphs
Publication Year :
1994

Abstract

Presents a study which determined the substrate temperature dependence of homoepitaxial growth of silicon using mass selected ion beam deposition. Function for the reflection of high-energy electron diffraction and Rutherford backscattering spectrometry; Transition to an amorphous phase at lower film thickness; Effects of substrate temperature, contamination and surface damage on the growth mechanism.

Details

Language :
English
ISSN :
00218979
Volume :
76
Issue :
7
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7621392
Full Text :
https://doi.org/10.1063/1.357328