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Magnetic and strain field splitting of the emission lines in the 1.5040–1.5110 eV range in GaAs.

Authors :
Reynolds, D. C.
Bajaj, K. K.
Litton, C. W.
Yu, P. W.
Huang, D.
Klem, J.
Morkoç, H.
Source :
Journal of Applied Physics; 9/1/1986, Vol. 60 Issue 5, p1767, 3p, 2 Diagrams, 2 Graphs
Publication Year :
1986

Abstract

Describes the magnetic field splitting and strain splitting of the emission lines in the 1.5040-1.5110 electronvolt range in GaAs. Information on the shallow donor-acceptor pair model; Description of the splitting patterns for shallow donor-acceptor centers in a zinc-blende lattice; Analysis of nine lines for hole g values.

Details

Language :
English
ISSN :
00218979
Volume :
60
Issue :
5
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7621547
Full Text :
https://doi.org/10.1063/1.337271