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Magnetic and strain field splitting of the emission lines in the 1.5040–1.5110 eV range in GaAs.
- Source :
- Journal of Applied Physics; 9/1/1986, Vol. 60 Issue 5, p1767, 3p, 2 Diagrams, 2 Graphs
- Publication Year :
- 1986
-
Abstract
- Describes the magnetic field splitting and strain splitting of the emission lines in the 1.5040-1.5110 electronvolt range in GaAs. Information on the shallow donor-acceptor pair model; Description of the splitting patterns for shallow donor-acceptor centers in a zinc-blende lattice; Analysis of nine lines for hole g values.
- Subjects :
- MAGNETIC fields
SPLITTING extrapolation method
ZINC
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 60
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7621547
- Full Text :
- https://doi.org/10.1063/1.337271