Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high-energy electron irradiation and annealing.

Presents observations on discrete conductance fluctuations below the breakdown voltage in selected reverse-biased p[sup+]-n[sup++] base-emitter junctions originating from gate turn-off thyristors. Samples used in the study; Existence of local tunneling paths; Details on the discrete conductance fluctuations; Experiments done in order to study the influence of external stress.