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Formation of PtSi-contacted p+n shallow junctions by BF+2 implantation and low-temperature furnace annealing.
- Source :
- Journal of Applied Physics; 4/15/1991, Vol. 69 Issue 8, p4354, 10p, 2 Black and White Photographs, 2 Charts, 11 Graphs
- Publication Year :
- 1991
-
Abstract
- Presents a study that investigated the characteristics of PtSi-silicided p[sup+] n shallow junctions fabricated by implanting BF[sub2][sup+] ions and low-temperature furnace annealing. Benefits of self-aligned silicide process; Procedures in preparing the samples; Summary of the sample identification number and the key process conditions.
- Subjects :
- ANNEALING of metals
SILICIDES
IONS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 69
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7624400
- Full Text :
- https://doi.org/10.1063/1.348359