Simultaneous disordering and isolation induced by ion mixing in InGaAs/InP superlattice structures.

Authors :: Pappert, S. A.
Xia, W.
Zhu, B.
Clawson, A. R.
Guan, Z. F.
Yu, P. K. L.
Lau, S. S.
Source :: Journal of Applied Physics; 8/15/1992, Vol. 72 Issue 4, p1306, 6p, 1 Diagram, 1 Chart, 4 Graphs
Publication Year :: 1992
Abstract: Studies the simultaneous compositional disordering and the formation of electrical resistive layers induced by oxygen implantation in indium gallium arsenide/indium phosphide superlattices. Details on the experiment; Results of the study; Conclusion.

Full Text Access

Tools