Al–Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon-doped Al0.4Ga0.6As/GaAs superlattices: The As4 pressure effect.

MLA

You, H. M., et al. “Al–Ga Interdiffusion, Carbon Acceptor Diffusion, and Hole Reduction in Carbon-Doped Al0.4Ga0.6As/GaAs Superlattices: The As4 Pressure Effect.” Journal of Applied Physics, vol. 74, no. 4, Aug. 1993, p. 2450. EBSCOhost, https://doi.org/10.1063/1.354682.

APA

You, H. M., Tan, T. Y., Gösele, U. M., Lee, S.-T., Höfler, G. E., Hsieh, K. C., & Holonyak, N. (1993). Al–Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon-doped Al0.4Ga0.6As/GaAs superlattices: The As4 pressure effect. Journal of Applied Physics, 74(4), 2450. https://doi.org/10.1063/1.354682

Chicago

You, H. M., T. Y. Tan, U. M. Gösele, S.-T. Lee, G. E. Höfler, K. C. Hsieh, and N. Holonyak. 1993. “Al–Ga Interdiffusion, Carbon Acceptor Diffusion, and Hole Reduction in Carbon-Doped Al0.4Ga0.6As/GaAs Superlattices: The As4 Pressure Effect.” Journal of Applied Physics 74 (4): 2450. doi:10.1063/1.354682.