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Implantation-enhanced interdiffusion of CdTe-ZnTe heterostructures.
- Source :
- Journal of Applied Physics; 8/15/1993, Vol. 74 Issue 4, p2524, 11p, 6 Black and White Photographs, 14 Graphs
- Publication Year :
- 1993
-
Abstract
- Presents a study which examined implantation-enhanced interdiffusion of CdTe-ZnTe strained heterostructures using photoluminescence channeling, transmission electron microscopy and secondary-ion-mass spectrometry. Details on studies of implantation-enhanced interdiffusion of semiconductor interfaces; Experimental conditions and samples; Implantation in bulk materials and heterostructures.
- Subjects :
- HETEROSTRUCTURES
PHOTOLUMINESCENCE
TRANSMISSION electron microscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 74
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7627158
- Full Text :
- https://doi.org/10.1063/1.354693