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Preparation of microcrystalline Si1-xCx thin films.
- Source :
- Journal of Applied Physics; 2/15/1987, Vol. 61 Issue 4, p1657, 3p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 2 Graphs
- Publication Year :
- 1987
-
Abstract
- Presents a study wherein Si[sub1-x]C[subx] thin films were prepared by glow discharge method in a hydrogen-rich atmosphere at low substrate temperature. Superior properties of microcrystalline silicon to hydrogenated amorphous silicon; Measurement of the properties of Si[sub1-x]C[subx] thin films; Description of the reflection high-energy electron diffraction and optical absorption.
- Subjects :
- THIN films
SURFACES (Technology)
GLOW discharges
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 61
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7628689
- Full Text :
- https://doi.org/10.1063/1.338057