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Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100).
- Source :
- Journal of Applied Physics; 10/15/1990, Vol. 68 Issue 8, p4053, 11p, 1 Chart, 14 Graphs
- Publication Year :
- 1990
-
Abstract
- Presents a study which examined the adsorption of triethylgallium on the gallium arsenide surface. Experimental details; Results and discussion; Conclusion.
- Subjects :
- ADSORPTION (Chemistry)
GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 68
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7637671
- Full Text :
- https://doi.org/10.1063/1.346242