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Deep-level transient spectroscopy and photoluminescence studies of electron-irradiated Czochralski silicon.
- Source :
- Journal of Applied Physics; 9/15/1986, Vol. 60 Issue 6, p1974, 6p, 6 Graphs
- Publication Year :
- 1986
-
Abstract
- Presents a study which examined the isothermal annealing of electron-irradiated Czochralski silicon samples using deep-level transient spectroscopy and photoluminescence. Background on Czochralski silicon; Experimental setup; Results and conclusions.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 60
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7638068
- Full Text :
- https://doi.org/10.1063/1.337198