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Effects of dislocations on threshold voltage of GaAs field-effect transistors.
- Source :
- Journal of Applied Physics; 8/1/1987, Vol. 62 Issue 3, p1097, 5p
- Publication Year :
- 1987
-
Abstract
- Focuses on the accurate model for the influence of dislocations on gallium arsenide field-effect transistors (FET). Procedure for finding the influence curve; Distributions of dislocations around FET; Cause of impurity segregation.
- Subjects :
- GALLIUM arsenide
FIELD-effect transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 62
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7641538
- Full Text :
- https://doi.org/10.1063/1.339715