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High-purity AlGaAs grown by molecular beam epitaxy using a superlattice buffer layer.
- Source :
- Journal of Applied Physics; 12/1/1985, Vol. 58 Issue 11, p4452, 3p, 1 Diagram, 1 Graph
- Publication Year :
- 1985
-
Abstract
- Presents a study which investigated high-purity aluminum gallium arsenide grown by molecular beam epitaxy using a superlattice buffer layer. Method of the study; Results and discussion; Conclusion.
- Subjects :
- GALLIUM arsenide
MOLECULAR beam epitaxy
SUPERLATTICES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 58
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7642930
- Full Text :
- https://doi.org/10.1063/1.336277