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Effect of annealing temperature on the hole concentration and lattice relaxation of carbon-doped GaAs and AlxGa1-xAs.
- Source :
- Journal of Applied Physics; 12/1/1992, Vol. 72 Issue 11, p5318, 7p, 6 Graphs
- Publication Year :
- 1992
-
Abstract
- Provides information on hole density in carbon-doped gallium arsenide and aluminum-gallium-arsenic as a function of the annealing temperature. Cause of an increase in lattice parameter of the carbon-doped epilayer; Direct determination of the lattice site location of carbon in samples; Information on the microstructural quality of the film; Use of transmission electron microscopy.
- Subjects :
- GALLIUM arsenide
ALUMINUM compounds
CARBON
THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 72
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7644877