The bonded unipolar silicon-silicon junction.

Authors :: Bengtsson, Stefan
Andersson, Gert I.
Andersson, Mats O.
Engström, Olof
Source :: Journal of Applied Physics; 7/1/1992, Vol. 72 Issue 1, p124, 17p, 2 Diagrams, 13 Charts, 2 Graphs
Publication Year :: 1992
Abstract: Investigates the electrical and optical properties of wafer bonded unipolar silicon-silicon junctions. Capacitance of the bonded structures; Effect of the photogenerated increase in the minority carrier concentration in the interfacial region; Reason for the increased concentration of deep electron traps in the vicinity of the bonded interface.