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Computer simulation of Si-implanted GaAs (001) single crystals.
- Source :
- Journal of Applied Physics; 7/1/1992, Vol. 72 Issue 1, p229, 5p
- Publication Year :
- 1992
-
Abstract
- Presents a study that investigated the silicon implantation efficiency, the silicon depth profile and the vacancy formation for silicon-implanted gallium arsenide crystals. Background on the implantation of impurity atoms in semiconductor materials; Discussion on the incident angle dependence of the implantation depth of the silicon ions and the vacancies of gallium and arsenic.
- Subjects :
- SILICON
GALLIUM arsenide
ATOMS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 72
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7651225
- Full Text :
- https://doi.org/10.1063/1.352164