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Annealing dynamics of molecular-beam epitaxial GaAs grown at 200 °C.
- Source :
- Journal of Applied Physics; 7/1/1993, Vol. 74 Issue 1, p306, 5p, 5 Graphs
- Publication Year :
- 1993
-
Abstract
- Investigates the annealing dynamics of molecular-beam epitaxial gallium arsenide grown at 200 °C. Details of Hall-effect measurements and analysis; Results of absorption analysis; Factor which allows an annealing model to be formulated.
- Subjects :
- MOLECULAR beam epitaxy
GALLIUM arsenide
HALL effect
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 74
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7651346
- Full Text :
- https://doi.org/10.1063/1.354108