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Annealing dynamics of molecular-beam epitaxial GaAs grown at 200 °C.

Authors :
Look, D. C.
Walters, D. C.
Robinson, G. D.
Sizelove, J. R.
Mier, M. G.
Stutz, C. E.
Source :
Journal of Applied Physics; 7/1/1993, Vol. 74 Issue 1, p306, 5p, 5 Graphs
Publication Year :
1993

Abstract

Investigates the annealing dynamics of molecular-beam epitaxial gallium arsenide grown at 200 °C. Details of Hall-effect measurements and analysis; Results of absorption analysis; Factor which allows an annealing model to be formulated.

Subjects

Subjects :
MOLECULAR beam epitaxy
GALLIUM arsenide
HALL effect

Details

Language :
English
ISSN :
00218979
Volume :
74
Issue :
1
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7651346
Full Text :
https://doi.org/10.1063/1.354108
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