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The formation of a continuous amorphous layer by room-temperature implantation of boron into silicon.
- Source :
- Journal of Applied Physics; 3/1/1988, Vol. 63 Issue 5, p1414, 5p, 4 Graphs
- Publication Year :
- 1988
-
Abstract
- Presents a study which examined the formation of a continuous amorphous layer by room-temperature implantation of boron into silicon. Background information on crystalline-to-amorphous conversion; Experiment; Results and discussion.
- Subjects :
- AMORPHOUS substances
ION implantation
PHASE transitions
BORON
SILICON
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 63
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7652079
- Full Text :
- https://doi.org/10.1063/1.341122