Modeling parallel conduction in GaAs/AlxGa1-xAs heterostructures.

Authors :: Hurd, C. M.
McAlister, S. P.
McKinnon, W. R.
Stewart, B. R.
Day, D. J.
Mandeville, P.
SpringThorpe, A. J.
Source :: Journal of Applied Physics; 5/1/1988, Vol. 63 Issue 9, p4706, 8p
Publication Year :: 1988
Abstract: Presents information on a study which discussed several features of the direct current properties of illuminated, n-type gallium (Ga) arsenide/aluminum[subx] Ga[sub1-x]arsenide heterostructures that normally are neglected when modeling the parallel conduction. Description of the sample preparation; Calculation outline; Discussion on temperature-dependent parameters.