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Rapid thermal annealing for 1-MeV arsenic-ion-implanted layers in silicon.
- Source :
- Journal of Applied Physics; 5/1/1991, Vol. 69 Issue 9, p6665, 9p, 3 Black and White Photographs, 1 Chart, 4 Graphs
- Publication Year :
- 1991
-
Abstract
- Presents a study that performed rapid thermal annealing (RTA) for i-MeV arsenic-ion-implanted layers in silicon. Application of high-energy implantation in silicon; Preparation of the arsenic samples; Analysis of the Rutherford backscattering spectra for implanted silicon samples before and after RTA.
- Subjects :
- RAPID thermal processing
ION implantation
SILICON
BACKSCATTERING
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 69
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7654337
- Full Text :
- https://doi.org/10.1063/1.348883