Characterization of n-type regions in GaAs formed by silicon fluoride molecular ion implantations.

Evaluates the quality of the n-type layers that were produced through the implantations of silicon and silicon fluoride ions into semi-insulating gallium arsenide (GaAs) wafers. Effect of transient annealing of shallow silicon implantations on axial and lateral diffusion; Application of a scanning electron microscope with cathodoluminescence capability; Free carrier distribution obtained for GaAs wafers subjected to furnace or rapid thermal annealing cycles for implant activation.