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Characterization of n-type regions in GaAs formed by silicon fluoride molecular ion implantations.
- Source :
- Journal of Applied Physics; 11/1/1989, Vol. 66 Issue 9, p4176, 5p
- Publication Year :
- 1989
-
Abstract
- Evaluates the quality of the n-type layers that were produced through the implantations of silicon and silicon fluoride ions into semi-insulating gallium arsenide (GaAs) wafers. Effect of transient annealing of shallow silicon implantations on axial and lateral diffusion; Application of a scanning electron microscope with cathodoluminescence capability; Free carrier distribution obtained for GaAs wafers subjected to furnace or rapid thermal annealing cycles for implant activation.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 66
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7655057
- Full Text :
- https://doi.org/10.1063/1.344002