Analysis of the effects of constant-current Fowler–Nordheim-tunneling injection with charge trapping inside the potential barrier.

Presents a study which investigated charge trapping and the generation of interface traps in thermally grown silicon oxide and its interface with silicon, produced by Fowler-Nordheim tunneling injection at low temperatures from highly doped silicon substrates. Position of the charge trapped in the oxide; Analysis of voltage shifts during Fowler-Nordheim-tunneling injection; Discussion on published models related to the study.