Properties of titanium nitride thin films deposited by rapid-thermal-low-pressure-metalorganic-chemical-vapor-deposition technique using tetrakis (dimethylamido) titanium precursor.

Presents a study in which titanium nitride thin films were deposited onto indium phosphide by means of rapid-thermal-low-pressure-chemical-vapor-deposition technique, using the tetrakis dimethylamido titanium Ti(NMe[sub2])[sub4] or DMATi complex as the precursor. Range of the film resistivity and stress; Deposition kinetics and uniformity of titanium nitride; Details on film stoichiometry and impurities incorporation.