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Lifetimes, ionization energies, and discussion of the emission lines in the 1.5040–1.5110-eV range in GaAs.
- Source :
- Journal of Applied Physics; 10/1/1986, Vol. 60 Issue 7, p2511, 6p, 5 Charts, 3 Graphs
- Publication Year :
- 1986
-
Abstract
- Presents a study which calculated the recombination lifetimes for donor-acceptor (D-A) pairs in gallium arsenide (GaAs). Observation of a group of photoluminescent lines in the energy in GaAs; Characteristics of the lifetimes D-A recombinations in GaAs; Activation of energies of D-A pairs.
- Subjects :
- GALLIUM arsenide
PHOTOLUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 60
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7656349
- Full Text :
- https://doi.org/10.1063/1.337113