Characterization of the Mn acceptor level in GaAs.

Authors :: Montelius, L.
Nilsson, S.
Samuelson, L.
Janzén, E.
Ahlström, M.
Source :: Journal of Applied Physics; 8/1/1988, Vol. 64 Issue 3, p1564, 4p, 1 Chart, 2 Graphs
Publication Year :: 1988
Abstract: Presents a study which investigated the manganese acceptor level in gallium arsenide using deep-level transient spectroscopy. Measurements of the emission and capture hole of electrons; Comparison between electron capture rates obtained from space-charge techniques and from photoluminescence decay measurements; Use of the radiative electron capture of the manganese acceptor.