CoSi2/Si1-xGex/Si(001) heterostructures formed through different reaction routes: Silicidation-induced strain relaxation, defect formation, and interlayer diffusion.

MLA

Nur, O., et al. “CoSi2/Si1-XGex/Si(001) Heterostructures Formed through Different Reaction Routes: Silicidation-Induced Strain Relaxation, Defect Formation, and Interlayer Diffusion.” Journal of Applied Physics, vol. 78, no. 12, Dec. 1995, p. 7063. EBSCOhost, https://doi.org/10.1063/1.360411.

APA

Nur, O., Willander, M., Hultman, L., Radamson, H. H., Hansson, G. V., Sardela, M. R., & Greene, J. E. (1995). CoSi2/Si1-xGex/Si(001) heterostructures formed through different reaction routes: Silicidation-induced strain relaxation, defect formation, and interlayer diffusion. Journal of Applied Physics, 78(12), 7063. https://doi.org/10.1063/1.360411

Chicago

Nur, O., M. Willander, L. Hultman, H. H. Radamson, G. V. Hansson, M. R. Sardela, and J. E. Greene. 1995. “CoSi2/Si1-XGex/Si(001) Heterostructures Formed through Different Reaction Routes: Silicidation-Induced Strain Relaxation, Defect Formation, and Interlayer Diffusion.” Journal of Applied Physics 78 (12): 7063. doi:10.1063/1.360411.