Back to Search
Start Over
Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interface.
- Source :
- Journal of Applied Physics; 3/15/1996, Vol. 79 Issue 6, p3042, 4p
- Publication Year :
- 1996
-
Abstract
- Focuses on a study which characterized the SiO[sub2]/SiC interface through the high-low capacitance-voltage and conductance-frequency techniques. Experimental details; Results and discussion; Summary.
- Subjects :
- SILICON oxide
SILICON carbide
INTERFACES (Physical sciences)
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7662897
- Full Text :
- https://doi.org/10.1063/1.361244