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GaxIn1-xAs quantum wire heterostructures formed by strain-induced lateral-layer ordering.
- Source :
- Journal of Applied Physics; 11/15/1995, Vol. 78 Issue 10, p6270, 6p, 4 Black and White Photographs, 1 Diagram, 5 Graphs
- Publication Year :
- 1995
-
Abstract
- Focuses on a study which examined the effect of growth temperature and the strained short-period superlattice layer thickness on Ga[subx]In[sub1-x]As material system. Methods of preparing quantum wire heterostructure; Effect of temperature; Examination of total strain effect.
- Subjects :
- TEMPERATURE
MATERIALS
HETEROSTRUCTURES
SUPERLATTICES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 78
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7663612
- Full Text :
- https://doi.org/10.1063/1.360507