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High-quality molecular-beam epitaxial regrowth of (Al,Ga)As on Se-modified (100) GaAs surfaces.
- Source :
- Journal of Applied Physics; 8/1/1990, Vol. 68 Issue 3, p1038, 5p
- Publication Year :
- 1990
-
Abstract
- Presents a study which examined high-quality molecular-beam epitaxial (MBE) regrowth of (Al[sub5]Ga)As on gallium arsenide (GaAs). Method used in high-quality MBE regrowth; Experiment on the regrowth of gallium arsenide surface; Summary of the surface reconstruction observed by reflection high-energy electron diffraction during the regrowth of GaAs.
- Subjects :
- GALLIUM arsenide
MOLECULAR beam epitaxy
OPTICAL diffraction
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 68
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7667833
- Full Text :
- https://doi.org/10.1063/1.346742