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Preparation of hydrogenated amorphous silicon with tunable gap by homogeneous chemical vapor deposition.
- Source :
- Journal of Applied Physics; 7/1/1990, Vol. 68 Issue 1, p143, 13p
- Publication Year :
- 1990
-
Abstract
- Focuses on a study which determined the properties of doped and undoped amorphous silicon films deposited by the homogenous chemical vapor deposition (HOMOCVD) technique. Information on HOMOCVD; Methodology of the study; Results and discussion.
- Subjects :
- AMORPHOUS substances
SILICON
THIN films
CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 68
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7668093
- Full Text :
- https://doi.org/10.1063/1.347106