Surface roughness in InGaAs channels of high electron mobility transistors depending on the...

Authors :: Peiro, F.
Cornet, A.
Morante, J.R.
Beck, M.
Py, M.A.
Source :: Journal of Applied Physics; 6/15/1998, Vol. 83 Issue 12, p7537, 5p, 9 Black and White Photographs, 4 Graphs
Publication Year :: 1998
Abstract: Provides information on an experiment investigating transmission electron (TEM) and Raman spectroscopy InAlAs/InGaAs/InP HEMT heterostructures grown by molecular beam epitaxy (MBE). Methodology used to conduct the experiment; Information on surface corrugation in lattice matched samples; Findings of the experiment.

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