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Imaging ambipolar diffusion of photocarriers in GaAs thin films.
- Source :
- Journal of Applied Physics; Jun2012, Vol. 111 Issue 12, p123720, 6p
- Publication Year :
- 2012
-
Abstract
- Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very low light excitation power, an increased power results in a decrease of the diffusion constant near the center of the image due to the onset of ambipolar diffusion. The results are in agreement with a numerical solution of the diffusion equations and with a physical analysis of the luminescence intensity at the centre of the image, which permits the determination of the ambipolar diffusion constant as a function of electron concentration. [ABSTRACT FROM AUTHOR]
- Subjects :
- GALLIUM arsenide
LUMINESCENCE
ELECTRONIC excitation
ELECTRONS
DIFFUSION
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 111
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 77442444
- Full Text :
- https://doi.org/10.1063/1.4730396