Enhanced memory performance by tailoring the microstructural evolution of (ZrO)(SiO) charge trapping layer in the nanocrystallites-based charge trap flash memory cells.

ZrO nanocrystallites based charge trap memory cells by incorporating a (ZrO)(SiO) film as a charge trapping layer and amorphous AlO as tunneling and blocking layer were prepared and investigated. The precipitation reaction in charge trapping layer forming ZrO nanocrystallites during rapid thermal annealing was investigated by transmission electron microscopy. The density and size of ZrO nanocrystallites are the critical factors for controlling the charge storage characteristics. The ZrO nanocrystallites based memory cells after postannealing at 800 C for 60 s exhibit the best electrical characteristics and a low charge loss ∼5 % after 10 write/erase cycles operation. [ABSTRACT FROM AUTHOR]