High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs.

An excellent on/off current ratio of \10^10 and a nearly ideal subthreshold slope of 65 mV/dec was confirmed in a p-InGaN/AlGaN/GaN high-electron-mobility transistor. Favorable I–V characteristics were achieved with the p-InGaN cap layer under the gate electrode. A dry etching technique with a low-damage p-InGaN cap layer resulted in a significantly low leakage current of \10^-11\ \A/mm. [ABSTRACT FROM AUTHOR]