Effect of channel width on ESD characteristics of SOI MOS device.

MLA

Yujuan He, et al. “Effect of Channel Width on ESD Characteristics of SOI MOS Device.” 2011 International Conference on Quality, Reliability, Risk, Maintenance & Safety Engineering (ICQR2MSE), Jan. 2011, pp. 469–71. EBSCOhost, https://doi.org/10.1109/ICQR2MSE.2011.5976655.

APA

Yujuan He, Yunfei En, Hongwei Luo, & Qingzhong Xiao. (2011). Effect of channel width on ESD characteristics of SOI MOS device. 2011 International Conference on Quality, Reliability, Risk, Maintenance & Safety Engineering (ICQR2MSE), 469–471. https://doi.org/10.1109/ICQR2MSE.2011.5976655

Chicago

Yujuan He, Yunfei En, Hongwei Luo, and Qingzhong Xiao. 2011. “Effect of Channel Width on ESD Characteristics of SOI MOS Device.” 2011 International Conference on Quality, Reliability, Risk, Maintenance & Safety Engineering (ICQR2MSE), January, 469–71. doi:10.1109/ICQR2MSE.2011.5976655.