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Variability analysis of scaled poly-Si channel FinFETs and tri-gate flash memories for high density and low cost stacked 3D-memory application.

Authors :
Liu, Y.X.
Mastukawa, T.
Endo, K.
Oruchi, S.
Tsukada, J.
Yamauchi, H.
Ishikawa, Y.
Sakamoto, K.
Masahara, M.
Kamei, T.
Hayashida, T.
Ogura, A.
Source :
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC); 2011, p203-206, 4p
Publication Year :
2011

Details

Language :
English
ISBNs :
9781457707070
Database :
Complementary Index
Journal :
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
Publication Type :
Conference
Accession number :
80398227
Full Text :
https://doi.org/10.1109/ESSDERC.2011.6044199