1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability.

Details

Language :

English

ISBNs :

9781424484256

Database :

Complementary Index

Journal :

2011 IEEE 23rd International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Publication Type :

Conference

Accession number :

80406513

Full Text :

https://doi.org/10.1109/ISPSD.2011.5890787