Correlation of Id- and Ig-random telegraph noise to positive bias temperature instability in scaled high-κ/metal gate n-type MOSFETs.

Details

Language :

English

ISBNs :

9781424491131

Database :

Complementary Index

Journal :

2011 IEEE International Reliability Physics Symposium (IRPS)

Publication Type :

Conference

Accession number :

80408619

Full Text :

https://doi.org/10.1109/IRPS.2011.5784475