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Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET.
- Source :
- 2003 International Symposium on Compound Semiconductors; 2003, p225-226, 2p
- Publication Year :
- 2003
Details
- Language :
- English
- ISBNs :
- 9780780378209
- Database :
- Complementary Index
- Journal :
- 2003 International Symposium on Compound Semiconductors
- Publication Type :
- Conference
- Accession number :
- 80775627
- Full Text :
- https://doi.org/10.1109/ISCS.2003.1239987