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Investigation of CVD SiCOH low-k time-dependent dielectric breakdown at 65nm node technology.

Authors :
Chen, F.
Chanda, K.
Gill, I.
AngyaI, M.
Demarest, J.
Sullivan, T.
Kontra, R.
Shinosky, M.
Li, J.
Economikos, L.
Hoinkis, M.
Lane, S.
McHerron, D.
Inohara, M.
Boettcher, S.
Dunn, D.
Fukasawa, M.
Zhang, B.C.
Ida, K.
Ema, T.
Source :
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings 43rd Annual; 2005, p501-507, 7p
Publication Year :
2005

Details

Language :
English
ISBNs :
9780780388031
Database :
Complementary Index
Journal :
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings 43rd Annual
Publication Type :
Conference
Accession number :
80792515
Full Text :
https://doi.org/10.1109/RELPHY.2005.1493136
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