Electrical Characteristic Enhancement of HfTaSiON-Gated Metal-Oxide-Semiconductor Devices Using HfON Buffer Layer.

Details

Language :

English

ISBNs :

9781424400836

Database :

Complementary Index

Journal :

2005 International Semiconductor Device Research Symposium

Publication Type :

Conference

Accession number :

80799432

Full Text :

https://doi.org/10.1109/ISDRS.2005.1596005