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DRAM memory electrical yield improvement by backgrinding induced backside damage.
- Source :
- 2006 International Conference on Electronic Materials & Packaging; 2006, p1-6, 6p
- Publication Year :
- 2006
Details
- Language :
- English
- ISBNs :
- 9781424408344
- Database :
- Complementary Index
- Journal :
- 2006 International Conference on Electronic Materials & Packaging
- Publication Type :
- Conference
- Accession number :
- 80848010
- Full Text :
- https://doi.org/10.1109/EMAP.2006.4430675