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A Novel Resistance Memory with High Scalability and Nanosecond Switching.

Authors :
Aratani, K.
Ohba, K.
Mizuguchi, T.
Yasuda, S.
Shiimoto, T.
Tsushima, T.
Sone, T.
Endo, K.
Kouchiyama, A.
Sasaki, S.
Maesaka, A.
Yamada, N.
Narisawa, H.
Source :
2007 IEEE International Electron Devices Meeting; 2007, p783-786, 4p
Publication Year :
2007

Details

Language :
English
ISBNs :
9781424415083
Database :
Complementary Index
Journal :
2007 IEEE International Electron Devices Meeting
Publication Type :
Conference
Accession number :
80908747
Full Text :
https://doi.org/10.1109/IEDM.2007.4419064