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A Commercial Field-Programmable Dense eFUSE Array Memory with 99.999% Sense Yield for 45nm SOI CMOS.
- Source :
- 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers; 2008, p406-407, 2p
- Publication Year :
- 2008
Details
- Language :
- English
- ISBNs :
- 9781424420100
- Database :
- Complementary Index
- Journal :
- 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
- Publication Type :
- Conference
- Accession number :
- 81021422
- Full Text :
- https://doi.org/10.1109/ISSCC.2008.4523229