Continuous analytic current-voltage (I–V) model for long-channel doped surrounding-gate MOSFETs (SGMOSFETs).

Details

Language :

English

ISBNs :

9781424426805

Database :

Complementary Index

Journal :

2008 International Conference on Advanced Technologies for Communications

Publication Type :

Conference

Accession number :

81039601

Full Text :

https://doi.org/10.1109/ATC.2008.4760585