Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF.

Details

Language :

English

ISBNs :

9781424417537

Database :

Complementary Index

Journal :

2008 International Conference on Simulation of Semiconductor Processes & Devices

Publication Type :

Conference

Accession number :

81048052

Full Text :

https://doi.org/10.1109/SISPAD.2008.4648263