Charge trapping in MOCVD hafnium-based gate field dielectric stack structures and its impact on device performance.

Details

Language :

English

ISBNs :

9780780381575

Database :

Complementary Index

Journal :

IEEE International Integrated Reliability Workshop Final Report, 2003

Publication Type :

Conference

Accession number :

81162327

Full Text :

https://doi.org/10.1109/IRWS.2003.1283295