Cite
New anode design concept of 600V thin wafer PT-IGBT with very low dose p-buffer and transparent p-emitter.
MLA
Matsudai, T., et al. “New Anode Design Concept of 600V Thin Wafer PT-IGBT with Very Low Dose p-Buffer and Transparent p-Emitter.” ISPSD ’03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices & ICs, 2003, Jan. 2003, pp. 75–78. EBSCOhost, https://doi.org/10.1109/ISPSD.2003.1225234.
APA
Matsudai, T., Tsukuda, M., Umekawa, S., Tanaka, M., & Nakagawa, A. (2003). New anode design concept of 600V thin wafer PT-IGBT with very low dose p-buffer and transparent p-emitter. ISPSD ’03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices & ICs, 2003, 75–78. https://doi.org/10.1109/ISPSD.2003.1225234
Chicago
Matsudai, T., M. Tsukuda, S. Umekawa, M. Tanaka, and A. Nakagawa. 2003. “New Anode Design Concept of 600V Thin Wafer PT-IGBT with Very Low Dose p-Buffer and Transparent p-Emitter.” ISPSD ’03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices & ICs, 2003, January, 75–78. doi:10.1109/ISPSD.2003.1225234.