Cite
4.5 kV 4H-SiC diodes with ideal forward characteristic.
MLA
Lendenmann, H., et al. “4.5 KV 4H-SiC Diodes with Ideal Forward Characteristic.” Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD ’01 (IEEE Cat. No.01CH37216), Jan. 2001, pp. 31–34. EBSCOhost, https://doi.org/10.1109/ISPSD.2001.934553.
APA
Lendenmann, H., Mukhitdinov, A., Dahlquist, F., Bleichner, H., Irwin, M., & Soderholm, R. (2001). 4.5 kV 4H-SiC diodes with ideal forward characteristic. Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD ’01 (IEEE Cat. No.01CH37216), 31–34. https://doi.org/10.1109/ISPSD.2001.934553
Chicago
Lendenmann, H., A. Mukhitdinov, F. Dahlquist, H. Bleichner, M. Irwin, and R. Soderholm. 2001. “4.5 KV 4H-SiC Diodes with Ideal Forward Characteristic.” Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD ’01 (IEEE Cat. No.01CH37216), January, 31–34. doi:10.1109/ISPSD.2001.934553.